PCRAM memory cell and method of making same

ABSTRACT

An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.

This application is a continuation of Ser. No. 09/853,233 filed May 11,2001.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to the field of semiconductor devicesand fabrication and, more particularly, to memory elements and methodsfor making memory elements.

2. Background of the Related Art

This section is intended to introduce the reader to various aspects ofart which may be related to various aspects of the present inventionthat are described and/or claimed below. This discussion is believed tobe helpful in providing the reader with background information tofacilitate a better understanding of the various aspects of the presentinvention. Accordingly, it should be understood that these statementsare to be read in this light, and not as admissions of prior art.

Microprocessor-controlled integrated circuits are used in a wide varietyof applications. Such applications include personal computers, vehiclecontrol systems, telephone networks, and a host of consumer products. Asis well known, microprocessors are essentially generic devices thatperform specific functions under the control of a software program. Thisprogram is stored in one or more memory devices that are coupled to themicroprocessor. Not only does the microprocessor access memory devicesto retrieve the program instructions, but it also stores and retrievesdata created during execution of the program in one or more memorydevices.

There are a variety of different memory devices available for use inmicroprocessor-based systems. The type of memory device chosen for aspecific function within a microprocessor-based system depends largelyupon what features of the memory are best suited to perform theparticular function. For instance, volatile memories, such as dynamicrandom access memories (DRAMs), must be continually powered in order toretain their contents, but they tend to provide greater storagecapability and programming options and cycles than non-volatilememories, such as read only memories (ROMs). While non-volatile memoriesthat permit limited reprogramming exist, such as electrically erasableand programmable “ROMs,” all true random access memories, i.e., thosememories capable of 10¹⁴ programming cycles are more, are volatilememories. Although one time programmable read only memories andmoderately reprogrammable memories serve many useful applications, atrue nonvolatile random access memory (NVRAM) would likely be needed tosurpass volatile memories in usefulness.

Efforts have been underway to create a commercially viable memory devicethat is both random access and nonvolatile using structure changingmemory elements, as opposed to the charge storage memory elements usedin most commercial memory devices. The use of electrically writable anderasable phase change materials, i.e., materials which can beelectrically switched between generally amorphous and generallycrystalline states or between different resistive states while incrystalline form, in memory applications is known in the art and isdisclosed, for example, in U.S. Pat. No. 5,296,716 to Ovshinsky et al.The Ovshinsky patent contains a discussion of the general theory ofoperation of chalcogenide materials, which are a particular type ofstructure changing material.

As disclosed in the Ovshinsky patent, such phase change materials can beelectrically switched between a first structural state, in which thematerial is generally amorphous, and a second structural state, in whichthe material has a generally crystalline local order. The material mayalso be electrically switched between different detectable states oflocal order across the entire spectrum between the completely amorphousand the completely crystalline states. In other words, the switching ofsuch materials is not required to take place in a binary fashion betweencompletely amorphous and completely crystalline states. Rather, thematerial may be switched in incremental steps reflecting changes oflocal order to provide a “gray scale” represented by a multiplicity ofconditions of local order spanning the spectrum from the completelyamorphous state to the completely crystalline state.

These memory elements are monolithic, homogeneous, and formed ofchalcogenide material typically selected from the group of Te, Se, Sb,Ni, and Ge. This chalcogenide material exhibits different electricalcharacteristics depending upon its state. For instance, in its amorphousstate the material exhibits a higher resistivity than it does in itscrystalline state. Such chalcogenide materials may be switched betweennumerous electrically detectable conditions of varying resistivity innanosecond time periods with the input of picojoules of energy. Theresulting memory element is truly non-volatile. It will maintain theintegrity of the information stored by the memory cell without the needfor periodic refresh signals, and the data integrity of the informationstored by these memory cells is not lost when power is removed from thedevice. The memory material is also directly overwritable so that thememory cells need not be erased, i.e., set to a specified startingpoint, in order to change information stored within the memory cells.Finally, the large dynamic range offered by the memory materialtheoretically provides for the gray scale storage of multiple bits ofbinary information in a single cell by mimicking the binary encodedinformation in analog form and, thereby, storing multiple bits of binaryencoded information as a single resistance value in a single cell.

Traditionally, the operation of chalcogenide memory cells requires thata region of the chalcogenide memory material, called the “activeregion,” be subjected to a current pulse to change the crystalline stateof the chalcogenide material within the active region. Typically, acurrent density of between about 10⁵ and 10⁷ amperes/cm² is needed. Toobtain this current density in a commercially viable device having atleast one million memory cells, for instance, one theory suggests thatthe active region of each memory cell should be made as small aspossible to minimize the total current drawn by the memory device.

However, such traditional chalcogenide memory cells have evolved intowhat is referred to as a programmable metallization cell or a platedchalcogenide memory cell for use in a plated chalcogenide random accessmemory (PCRAM) device. Such a cell includes a chalcogenide materialbetween opposing electrodes. A fast ion conductor material isincorporated into the chalcogenide material. The resistance of suchmaterial can be changed between highly resistive and highly conductivestates.

To perform a write operation with the memory cell in its normal highresistive state, a voltage potential is applied to a certain one of theelectrodes, with the other of the electrode being held at zero voltageor ground. The electrode having the voltage applied to it functions asan anode, while the electrode held at zero or ground functions as acathode. The nature of the fast ion conductor material is such that itundergoes a chemical and structural change at a certain applied voltagelevel. Specifically, at some suitable threshold voltage, the metal ionswithin the chalcogenide material begin to plate on the cathode andprogress through the chalcogenide material toward the anode. The processcontinues until a conductive dendrite or filament extends between theelectrodes, effectively interconnecting the top and bottom electrodes tocreate an electrical short circuit.

Once this occurs, dendrite growth stops, and the dendrite is retainedwhen the voltage potentials are removed. This results in the resistanceof the chalcogenide material between the electrodes dropping by a factorof about 1,000. The material can be returned to its highly resistivestate by reversing the voltage potential between the anode and cathodeto cause the dendrite to disappear. Again, the highly resistive state ismaintained when the reverse voltage potential is removed. Accordingly,such a device can, for example, function as a reprogrammable memory cellof non-volatile random access memory circuit.

As mentioned above, the variable resistance material disposed betweenthe electrodes typically is a chalcogenide material having metal ionsdiffused therein. A specific example is germanium selenide with silverions. Typically, to provide the silver ions within the germaniumselenide material, germanium selenide is deposited onto the firstelectrode using chemical vapor deposition. A thin layer of silver isthen deposited on the glass, for example by physical vapor deposition oranother technique. The layer of silver is then irradiated withultraviolet radiation. The thin nature of the deposited silver allowsthe energy to pass through the silver to the silver/glass interface tocause the silver to diffuse into the chalcogenide material. The appliedenergy and overlying silver result in the silver migrating into theglass layer such that a homegenous distribution of silver throughout thelayer is ultimately achieved.

Unfortunately, chalcogenide materials are relatively delicate. Thenature of the deposition technique used to deposit the silver can damagethe chalcogenide material, and, thus, adversely affect the resultingmemory cell. Furthermore, it can be challenging to etch and polishchalcogenide materials. Accordingly, it would be desirable to developmemory cell fabrication methods that avoid steps that can damage suchmaterials.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages of the invention will become apparentupon reading the following detailed description and upon reference tothe drawings in which:

FIG. 1 illustrates a block diagram of an exemplary processor-baseddevice;

FIG. 2 illustrates an exemplary memory device;

FIG. 3 illustrates a more detailed view of the memory array of thememory device illustrated in FIG. 2;

FIGS. 4-10 illustrate cross-sectional views of a memory cell duringdifferent stages of fabrication;

FIGS. 11-15 illustrate cross-sectional views of an alternate embodimentof a memory cell during different stages of fabrication; and

FIGS. 16-19 illustrate cross-sectional views of another alternateembodiment of a memory cell during different stages of fabrication.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Specific embodiments of microprocessor-based systems, memories, memoryelements, and methods of making such memory elements are described belowas they might be implemented for use in semiconductor memory circuits.In the interest of clarity, not all features of an actual implementationare described in this specification. It should be appreciated that inthe development of any such actual implementation, as in any engineeringproject, numerous implementation-specific decisions must be made toachieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time-consuming, but wouldnevertheless be a routine undertaking for those of ordinary skill havingthe benefit of this disclosure.

Turning now to the drawings, and referring initially to FIG. 1, a blockdiagram depicting an exemplary processor-based device, generallydesignated by the reference numeral 10, is illustrated. The device 10may be any of a variety of different types, such as a computer, pager,cellular telephone, personal organizer, control circuit, etc. In atypical processor-based device, one or more processors 12, such as amicroprocessor(s), control many of the functions of the device 10.

The device 10 typically includes a power supply 14. For instance, if thedevice 10 is portable, the power supply 14 would advantageously includepermanent batteries, replaceable batteries, and/or rechargeablebatteries. The power supply 14 may also include an A/C adapter, so thatthe device may be plugged into a wall outlet, for instance. In fact, thepower supply 14 may also include a D/C adapter, so that the device 10may be plugged into a vehicle's cigarette lighter, for instance.

Various other devices may be coupled to the processor(s) 12, dependingupon the functions that the device 10 performs. For instance, a userinterface 16 may be coupled to the processor(s) 12. The user interface16 may include an input device, such as buttons, switches, a keyboard, alight pin, a mouse, and/or a voice recognition system, for instance. Adisplay 18 may also be coupled to the processor(s) 12. The display 18may include an LCD display, a CRT, LEDs, and/or an audio display.Furthermore, an RF subsystem/baseband processor 20 may also be coupledto the processor(s) 12. The RF subsystem/baseband processor 20 mayinclude an antenna that is coupled to an RF receiver and to an RFtransmitter (not shown). A communication port 22 may also be coupled tothe processor(s) 12. The communication port 22 may be adapted to becoupled to a peripheral device 24, such as a modem, a printer, or acomputer, for instance, or to a network, such as a local area network orthe Internet.

Because the processor(s) 12 controls the functioning of the device 10generally under the control of software programming, memory is coupledto the processor(s) 12 to store and facilitate execution of the softwareprogram. For instance, the processor(s) 12 may be coupled to volatilememory 26, which may include dynamic random access memory (DRAM), staticrandom access memory (SRAM), Double Data Rate (DDR) memory, etc. Theprocessor(s) 12 may also be coupled to non-volatile memory 28. Thenon-volatile memory 28 may include a read only memory (ROM), such as anEPROM or Flash Memory, to be used in conjunction with the volatilememory. The size of the ROM is typically selected to be just largeenough to store any necessary operating system, application programs,and fixed data. The volatile memory, on the other hand, is typicallyquite large so that it can store dynamically loaded applications.Additionally, the non-volatile memory 28 may include a high capacitymemory such as a disk drive, tape drive memory, CD ROM drive, DVD,read/write CD ROM drive, and/or a floppy disk drive.

An exemplary memory device is illustrated in FIG. 2 and generallydesignated by a reference numeral 30. The memory device 30 is anintegrated circuit memory that is advantageously formed on asemiconductor substrate 32. The memory device 30 includes a memorymatrix or array 34 that includes a plurality of memory cells for storingdata, as described below. The memory matrix 34 is coupled to peripherycircuitry 36 by the plurality of control lines 38. The peripherycircuitry 36 may include circuitry for addressing the memory cellscontained within the memory matrix 34, along with circuitry for storingdata in and retrieving data from the memory cells. The peripherycircuitry 36 may also include other circuitry used for controlling orotherwise insuring the proper functioning of the memory device 30.

A more detailed depiction of the memory matrix 34 is illustrated in FIG.3. As can be seen, the memory matrix 34 includes a plurality of memorycells 40 that are arranged in generally perpendicular rows and columns.The memory cells 40 in each row are coupled together by a respectiveword line 42, and the memory cells 40 in each column are coupledtogether by a respective digit line 44. Specifically, each memory cell40 includes a word line node 46 that is coupled to a respective wordline 42, and each memory cell 40 includes a digit line node 48 that iscoupled to a respective digit line 44. The conductive word lines 42 anddigit lines 44 are collectively referred to as address lines. Theseaddress lines are electrically coupled to the periphery circuitry 36 sothat each of the memory cells 40 can be accessed for the storage andretrieval of information.

Turning now to FIGS. 4-10, a first exemplary embodiment of a memory cell40 will be described. FIG. 10 illustrates the finished memory cell 40A,and FIGS. 4-9 illustrate the memory cell 40A at various stages offabrication. The suffix “A” is used in describing this first embodimentfor clarity so that similar reference numerals may be used to describesubsequent embodiments. As illustrated in FIG. 10, the finished memorycell 40A includes a word line 42A, which is often referred to as a Metal1 (M1) layer. The word line 42A has a layer of conductive material 50A,such as silver (Ag), disposed thereon. A layer of chalcogenide material52A, such as germanium selenide (GeSe), having metal ions diffusedtherein is disposed over the conductive layer 50A. The metal ionsdiffused in the chalcogenide material 52A typically originate in thelayer of conductive material 50A. The digit line 44A, often referred toas a Metal 2 (M2) layer, is disposed over the chalcogenide layer 52A.Each memory cell 40A is typically isolated from adjacent memory cells byoxide regions 54A, and each memory cell 40A is typically fabricated on asubstrate 56A.

One method of fabricating the memory cell 40A is disclosed withreference to the various stages of fabrication illustrated in FIGS. 4-9.Referring first to FIG. 4, a substrate 56A is typically used as a baseupon which the memory cells 40A of the memory array 44 are formed. Inthis discussion, the substrate 56A is generally used in a generic sense,because it is possible for the substrate 56A to take various formsdepending upon the nature of the circuit design. For example, thesubstrate 56A may be a suitable semiconductor substrate, such as siliconor galium arsenide, or a suitable dielectric substrate, such as PECVDsilicon dioxide. Furthermore, the substrate 56A may include layers,devices, and/or structures upon which or around which the memory cells40A may be fabricated.

A layer of dielectric material 54A, for example an oxide such as silicondioxide, is formed over the substrate 56A, as illustrated in FIG. 5. Thelayer of dielectric material 54A may be formed by any suitable process,such as by chemical vapor deposition. A window 58A is formed in thelayer of dielectric material 54A. The window may extend partiallythrough the layer of dielectric material 54A, or completely through thelayer of dielectric material 54A to the substrate 56A, as illustrated inFIG. 5. The window 58A may be formed by any suitable process, such as bythe use of standard photolithographic techniques.

As illustrated in FIGS. 5 and 6, a layer of conductive material isdeposited into the window 58A and planarized to form the word line 42A.Again, any suitable deposition technique, such as sputtering, and anysuitable planarization technique, such as chemical mechanicalplanarization (CMP), may be used. The conductive material used to formthe word line 42A is typically a metal, such as copper, tungsten,nickel, or aluminum. Although the word line 42A is illustrated as beingformed in a dielectric material 54A in this embodiment, it should beappreciated that the word line 42A may be formed in other manners aswell. For example, the word line 42A may be buried in the substrate 56A.

A fast ion conductive material is then disposed on the word line 42A.The fast ion conductive material is selected to cooperate with asubsequently applied layer of chalcogenide material to form the memoryelement of the memory cell 40A. In this embodiment, the word line 42A isplated with the conductive material 50A using an immersion platingprocess. In general, immersion plating replaces a less noble metal witha more noble metal. It is an ion exchange process that requires neitherexternal electricity nor a catalyst. Immersion plating can be used in aself-limiting process, and it usually plates thinner films than otherplating methods. Immersion plating depends on the base metal, i.e., theless noble metal. Many factors can influence immersion plating, such asthe type of ligand used to take up the base metal and to keep the basemetal in solution.

In this exemplary embodiment, the base metal of the word line 42A isselected to be copper, and the more noble metal of the conductive layer50A is selected to be silver. Of course, it should be recognized thatother base metals, such as nickel, aluminum, or tungsten, for example,may be used in place of copper, and that alloys of such metals may beused as well. In addition, various “more noble” metals, such as gold,may be used in place of silver. However, for the purposes of thisexemplary embodiment utilizing copper and silver, a silver immersionsolution called “argentomerse” available from Technic, Inc. may be used.This silver immersion solution utilizes a cyanide salt chemistry, whichessentially represents a general purpose immersion plating solution. Asilver immersion solution such as argentomerse should suffice forplating silver on base metals such as nickel or copper. However, forimmersion plating of silver on tungsten, it may be desirable to utilizeanother silver immersion solution in order to optimize the chemistry.The structure illustrated in FIG. 6 is immersed in the silver immersionsolution for a sufficient amount of time to form the layer of conductivematerial 50A. For example, the structure may be immersed in the solutionfor 15 to 30 minutes to form the conductive layer 50A having a thicknessof 500A to 2000A.

After the conductive layer 50A has been formed on the word line 42A, alayer of chalcogenide material 52A, such as germanium selenide, may beformed over the conductive layer 50A, as illustrated in FIG. 8. Thelayer of chalcogenide material 52A may be formed by any suitableprocess, such as chemical vapor deposition. The layer of chalcogenidematerial 52A may have a thickness in the range of 200A to 800A, forexample.

Once the layer of chalcogenide material 52A is formed over the layer ofconductive material 50A, the structure illustrated in FIG. 8 isprocessed in a manner that causes at least a portion of the material inthe conductive layer 50A to migrate into the layer of chalcogenidematerial 52A. In this embodiment, the structure illustrated in FIG. 8 issubjected to ultraviolet radiation and heat to cause silver atoms in thelayer of conductive material 50A to migrate into the layer ofchalcogenide material 52A. For example, the structure in FIG. 8 may besubmitted to ultraviolet radiation in the range of 160 nm to 904 nm,e.g., 405 nm, at an intensity of 10 microjoules to 10 millijoules for aperiod of 5 to 30 minutes, and heat at a temperature of 50 to 85 degreesCelsius for a period of 5 to 20 minutes. Typically, the heat cycle isperformed first, followed by the UV cycle.

After this conversion process, the layer of chalcogenide material 52Ahas metal ions in it, as illustrated in FIG. 9. Then, the Metal 2 (M2)layer, which forms the digit line 44A, may be disposed over the layer ofchalcogenide material 52A, as illustrated in FIG. 10, to complete thememory cell 40A.

It should be appreciated from the discussion of the structure and methodof fabrication of the memory cell 40A that it represents an invertedPCRAM memory cell. As discussed previously, a typical PCRAM memory cellis fabricated by forming a layer of chalcogenide material on the Metal 1layer, thus requiring the conductive layer, such as silver, to bedisposed on the chalcogenide layer. However, because chalcogenide is avery delicate material as discussed previously, known methods ofdepositing silver on chalcogenide are difficult to control in a reliableand repeatable fashion. However, by inverting the traditional PCRAMmemory cell so that the conductive layer, such as silver, is disposed onthe Metal 1 layer, the delicate nature of the subsequently depositedchalcogenide material does not pose a problem.

FIGS. 11-15 illustrate a second embodiment of the memory cell 40. FIG.15 illustrates the finished memory cell 40B, and FIGS. 11-14 illustratethe memory cell 40B at various stages of fabrication. The suffix “B” isused in describing this second embodiment for clarity so that similarreference numerals may be used. As illustrated in FIG. 15, the finishedmemory cell 40B includes a word line 42B, which is again referred to asa Metal 1 (M1) layer. The word line 42B has a layer of conductivematerial 50B, such as silver (Ag), disposed thereon. A layer ofchalcogenide material 52B, such as germanium selenide (GeSe), havingmetal ions diffused therein is disposed over the conductive layer 50B.Unlike the first embodiment, the layer of conductive material 50B andthe layer of chalcogenide material 52B are disposed in a window createdin a layer of dielectric material 60B. The digit line 44B, againreferred to as a Metal 2 (M2) layer, is disposed over the chalcogenidelayer 52B. Each memory cell 40B is typically isolated from adjacentmemory cells by oxide regions 54B, and each memory cell 40B is typicallyfabricated on a substrate 56B.

One method of fabricating the memory cell 40B is disclosed withreference to, the various stages of fabrication illustrated in FIGS.11-14. However, before discussing FIGS. 11-14, it should be understoodthat the memory cell 40B first undergoes the stages of fabricationillustrated in FIGS. 4-6. Then, as illustrated in FIG. 11, a layer ofdielectric material 60B is deposited over the structure, and a window 62is formed in the layer of dielectric material 60B to expose at least aportion of the underlying word line 42B. The layer of dielectricmaterial 60B may be deposited in any suitable manner, such as bychemical vapor deposition, and it may include any suitable dielectric,such as silicon nitride. The thickness of the layer of dielectricmaterial 60B may be in the range of 200A to 1000A, for example.

A fast ion conductive material is then disposed on the portion of theword line 42B exposed by the window 62. The selection of the fast ionconductive material and the manner in which it may be applied does notdiffer from the previous embodiment. Accordingly, for the sake ofclarity, in this exemplary embodiment, the base metal of the word line42B is selected to be copper, and the more noble metal of the conductivelayer 50B is selected to be silver. The structure illustrated in FIG. 11is immersed in the silver immersion solution for a sufficient amount oftime to form the layer of conductive material 50B, as illustrated inFIG. 12.

After the conductive layer 50B has been formed on the word line 42B, alayer of chalcogenide material 52B, such as germanium selenide, may bedeposited in the window 62 over the conductive layer 50B, as illustratedin FIG. 13. The layer of chalcogenide material 52B may be formed by anysuitable process, such as chemical vapor deposition. The deposited layerof chalcogenide material 52B is then planarized, by chemical mechanicalplanarization for example, so that the layer of chalcogenide material52B remains only within the window 62. Thus, the thickness of the layerof chalcogenide material 52B is approximately the same as the thicknessof the layer of dielectric material 60B.

Once the layer of chalcogenide material 52B is formed in the window 62,the structure illustrated in FIG. 13 is processed in a manner thatcauses at least a portion of the material in the conductive layer 50B tomigrate into the layer of chalcogenide material 52B. As in the previousembodiment, the structure illustrated in FIG. 13 is subjected toultraviolet radiation and heat to cause silver atoms in the layer ofconductive material 50B to migrate into the layer of chalcogenidematerial 52B.

After this conversion process, the layer of chalcogenide material 52Bhas metal ions in it, as illustrated in FIG. 14. Then, the Metal 2 (M2)layer, which forms the digit line 44B, may be disposed over the layer ofdielectric material 60B and over the layer of chalcogenide material 52B,as illustrated in FIG. 15, to complete the memory cell 40B.

FIGS. 16-19 illustrate a third embodiment of the memory cell 40. FIG. 19illustrates the finished memory cell 40C, and FIGS. 16-18 illustrate thememory cell 40C at various stages of fabrication. The suffix “C” is usedin describing this third embodiment for clarity so that similarreference numerals may be used. As illustrated in FIG. 19, the finishedmemory cell 40C includes a word line 42C, which is again referred to asa Metal 1 (M1) layer. The word line 42C has a layer of conductivematerial 50C, such as silver (Ag), disposed thereon. A layer ofchalcogenide material 52C, such as germanium selenide (GeSe), havingmetal ions diffused therein is disposed over the conductive layer 50C.Unlike the previous embodiments, the layer of conductive material 50Cand the layer of chalcogenide material 52C are disposed in a windowcreated in a layer of dielectric material 60C and in a layer ofconductive material 44′C. The layer of conductive material 44′C. forms aportion of the digit line and is again referred to as a Metal 2 (M2)layer. The other portion of the digit line is formed by a layer ofconductive material 44″C, which is disposed over the chalcogenide layer52C and over the Metal 2 layer. The layer of conductive material 44″C isreferred to as the Metal 3 (M3) layer. Each memory cell 40C is typicallyisolated from adjacent memory cells by oxide regions 54C, and eachmemory cell 40C is typically fabricated on a substrate 56C.

One method of fabricating the memory cell 40C is disclosed withreference to the various stages of fabrication illustrated in FIGS.16-18. However, before discussing FIGS. 16-18, it should be understoodthat the memory cell 40C first undergoes the stages of fabricationillustrated in FIGS. 4-6. Then, as illustrated in FIG. 16, a layer ofdielectric material 60C is deposited over the structure, and a layer ofconductive material 44′C. (the Metal 2 layer) is deposited over thelayer of dielectric material 60C. The layer of dielectric material 60Cmay be deposited in any suitable manner, such as by chemical vapordeposition, and it may include any suitable dielectric, such as siliconnitride. The layer of conductive material 44′C. may be deposited in anysuitable manner, such as by sputtering, and it may include any suitableconductive material, such as platinum, aluminum, or tungsten. Thethickness of the layer of dielectric material 60C may be in the range of200A to 1000A, for example, and the thickness of the layer of conductivematerial 44′C. may be in the range of 500A to 2000A, for example.

A window 64 is formed in the layer of dielectric material 60C and in thelayer of conductive material 44′C. to expose at least a portion of theunderlying word line 42C. The window 64 may be formed in any suitablemanner, such as by the use of standard photolithographic techniques.

A fast ion conductive material is then disposed on the portion of theword line 42C exposed by the window 64. The selection of the fast ionconductive material and the manner in which it may be applied does notdiffer from the previous embodiments. Accordingly, for the sake ofclarity, in this exemplary embodiment, the base metal of the word line42C is selected to be copper, and the more noble metal of the conductivelayer 50C is selected to be silver. The structure illustrated in FIG. 16is immersed in the silver immersion solution for a sufficient amount oftime to form the layer of conductive material 50C, as illustrated inFIG. 17.

After the conductive layer 50C has been formed on the word line 42C, alayer of chalcogenide material 52C, such as germanium selenide, may bedeposited in the window 64 over the conductive layer 50C, as illustratedin FIG. 18. The layer of chalcogenide material 52C may be formed by anysuitable process, such as chemical vapor deposition. The deposited layerof chalcogenide material 52C is then planarized, by chemical mechanicalplanarization for example, so that the layer of chalcogenide material52C remains only within the window 64. Thus, the thickness of the layerof chalcogenide material 52C is approximately the same as the thicknessof the layers of dielectric material 60C and conductive material 44′C.

Once the layer of chalcogenide material 52C is formed in the window 64,the structure illustrated in FIG. 18 is processed in a manner thatcauses at least a portion of the material in the conductive layer 50C tomigrate into the layer of chalcogenide material 52C. As in the previousembodiments, the structure illustrated in FIG. 18 is subjected toultraviolet radiation and heat to cause silver atoms in the layer ofconductive material 50C to migrate into the layer of chalcogenidematerial 52C.

After this conversion process, the layer of chalcogenide material 52Chas metal ions in it, as illustrated in FIG. 19. Then, a layer ofconductive material 44″C (the Metal 3 layer), which forms the remainderof the digit line, may be disposed over the layer of conductive material44′C. and over the layer of chalcogenide material 52C to complete thememory cell 40C.

As previously mention, chalcogenide material is somewhat susceptible todamage from planarization techniques, such as chemical mechanicalplanarization. However, it should be noted that the memory cell 40C isrelatively immune to any “over planarization” of the chalcogenidematerial 52C within the window 64. Although the planarization step canremove some of the relatively delicate chalcogenide material 52C fromthe top of the window 64, the electrical path from the digit line 44Cthrough the chalcogenide material 52C typically does not extend directlyfrom the layer of conductive material 44″C. Rather, the shortest pathtypically extends from the edge of the layer of conductive material44′C. Thus, for over planarization to affect the memory cell 40Cadversely, chalcogenide material 52C below the level of the dielectriclayer 60C would have to be removed. Since over planarization to such anextent is unlikely, the memory cell 40C typically provides forrelatively repeatable and consistent memory operation.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the followingappended claims.

1. A method of fabricating a memory cell, the method comprising the actsof: a. disposing a first line over a substrate, the first line beingformed of a first metal; b. plating the first line with a second metalby immersion in a solution containing the second metal; c. disposing alayer of chalcogenide material over the second metal; d. transferringions of the second metal into the chalcogenide material; and e.disposing a second line over the layer of chalcogenide material, thesecond line being formed of a third metal.
 2. The method, as set forthin claim 1, wherein act (a) comprises the act of: disposing at least oneof copper, nickel, and tungsten over the substrate.
 3. The method, asset forth in claim 1, wherein the second metal comprises silver.
 4. Themethod, as set forth in claim 1, wherein act (c) comprises the act of:disposing germanium selenide over the second metal.
 5. The method, asset forth in claim 1, wherein act (d) comprises the act of: heating thesecond metal and the chalcogenide material.
 6. The method, as set forthin claim 1, wherein act (d) comprises the act of: irradiating the secondmetal and the chalcogenide material with ultraviolet radiation.
 7. Themethod, as set forth in claims 1, wherein acts (a) through (e) areperformed in the order recited.
 8. The method, as set forth in claim 7,further comprising the act of: prior to transferring ions of the secondmetal into the chalcogenide material, planarizing the chalcogenidematerial disposed over the second metal.
 9. A method of fabricating amemory cell, the method comprising the acts of: a. disposing a layer ofdielectric material over a substrate; b. forming a window in the layerof dielectric material; c. disposing a first metal in the window; d.plating the first metal with a second metal by immersion in a solutioncontaining the second metal; e. disposing a layer of chalcogenidematerial over the second metal; f. transferring ions of the second metalinto the chalcogenide material; and g. disposing a third metal over thelayer of chalcogenide material.
 10. The method, as set forth in claim 9,wherein act (a) comprises the act of: disposing a layer of oxide overthe substrate.
 11. The method, as set forth in claim 9, wherein act (c)comprises the act of: disposing at least one of copper, nickel, andtungsten in the window.
 12. The method, as set forth in claim 9, whereinthe second metal comprises silver.
 13. The method, as set forth in claim9, wherein act (e) comprises the act of: disposing germanium selenideover the second metal.
 14. The method, as set forth in claim 9, whereinact (f) comprises the act of: heating the second metal and thechalcogenide material.
 15. The method, as set forth in claim 9, whereinact (f) comprises the act of: irradiating the second metal and thechalcogenide material with ultraviolet radiation.
 16. The method, as setforth in claim 9, wherein acts (a) through (g) are performed in theorder recited.
 17. A method of fabricating a memory cell, the methodcomprising the acts of: a. disposing a first layer of dielectricmaterial on a substrate; b. forming a first window in the first layer ofdielectric material; c. disposing a first metal in the first window; d.disposing a second layer of dielectric material over the first metal andthe first layer of dielectric material; e. forming a second window inthe second layer of dielectric material to expose at least a portion ofthe first metal in the first window; f. plating the first metal exposedby the second window with a second metal by immersion in a solutioncontaining the second metal; g. disposing a layer of chalcogenidematerial over the second metal; h. transferring ions of the second metalinto the chalcogenide material; and i. disposing a third metal over thelayer of chalcogenide material.
 18. The method, as set forth in claim17, wherein act (a) comprises the act of: disposing a layer of oxideover the substrate.
 19. The method, as set forth in claim 17, whereinact (c) comprises the act of: disposing at least one of copper, nickel,and tungsten in the window.
 20. The method, as set forth in claim 17,wherein act (d) comprises the act of: disposing a layer of siliconnitride over the first metal and the first layer of dielectric material.21. The method, as set forth in claim 17, wherein the second metalcomprises silver.
 22. The method, as set forth in claim 17, wherein act(g) comprises the act of: disposing germanium selenide over the secondmetal.
 23. The method, as set forth in claim 17, wherein act (h)comprises the act of: heating the second metal and the chalcogenidematerial.
 24. The method, as set forth in claim 17, wherein act (h)comprises the act of: irradiating the second metal and the chalcogenidematerial with ultraviolet radiation.
 25. The method, as set forth inclaim 17, wherein acts (a) through (i) are performed in the orderrecited.
 26. The method, as set forth in claim 25, further comprisingthe act of: prior to transferring ions of the second metal into thechalcogenide material, planarizing the chalcogenide material disposedover the second metal.
 27. A method of fabricating a memory cell, themethod comprising the acts of: a. disposing a first layer of dielectricmaterial on a substrate; b. forming a first window in the first layer ofdielectric material; c. disposing a first metal in the first window; d.disposing a second layer of dielectric material over the first metal andthe first layer of dielectric material; e. disposing a layer of a secondmetal over the second layer of dielectric material f. forming a secondwindow in the second layer of dielectric material and in the layer ofthe second metal to expose at least a portion of the first metal in thefirst window; g. plating the first metal exposed by the second windowwith a third metal by immersion in a solution containing the thirdmetal; h. disposing a layer of chalcogenide material over the thirdmetal; i. transferring ions of the third metal into the chalcogenidematerial; and j. disposing a fourth metal over the layer of chalcogenidematerial.
 28. The method, as set forth in claim 27, wherein act (a)comprises the act of: disposing a layer of oxide over the substrate. 29.The method, as set forth in claim 27, wherein act (c) comprises the actof: disposing at least one of copper, nickel, and tungsten in thewindow.
 30. The method, as set forth in claim 27, wherein act (d)comprises the act of: disposing a layer of silicon nitride over thefirst metal and the first layer of dielectric material.
 31. The method,as set forth in claim 27, wherein the third metal comprises silver. 32.The method, as set forth in claim 27, wherein act (h) comprises the actof: disposing germanium selenide over the third metal.
 33. The method,as set forth in claim 27, wherein act (i) comprises the act of: heatingthe third metal and the chalcogenide material.
 34. The method, as setforth in claim 27, wherein act (i) comprises the act of: irradiating thethird metal and the chalcogenide material with ultraviolet radiation.35. The method, as set forth in claim 27, wherein acts (a) through (j)are performed in the order recited.
 36. The method, as set forth inclaim 35, further comprising the act of: prior to transferring ions ofthe third metal into the chalcogenide material, planarizing thechalcogenide material disposed over the third metal.